IPP041N12N3 G
OptiMOSTM3 Power-Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO-263) ID
175 °C operating temperature
Pb-free lead plating; RoHS compliant, halogen free Qualified according to JEDEC1) for target application
Ideal for...
