Document
Type
IPB037N06N3 G
™
IPI040N06N3 G IPP040N06N3 G
OptiMOS 3 Power-Transistor
Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • N-channel, normal level • Avalanche rated • Qualified according to JEDEC1) for target applications • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type IPB037N06N3 G IPI040N06N3 G
Product Summary V DS R DS(on),max (SMD) ID 60 3.7 90 V mΩ A
previous engineering sample codes: IPP04xN06N IPI04xN06N IPB04xN06N
IPP040N06N3 G
Package Marking
PG-TO263-3 037N06N
PG-TO262-3 040N06N
PG-TO220-3 040N06N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current3) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1
1) www.DataSheet4U.com J-STD20 and JESD22 2) 3) 4)
Value 90 90 360 165 ±20
Unit A
I D,pulse E AS V GS P tot T j, T stg
T C=25 °C I D=90 A, R GS=25 Ω
mJ V W °C
T C=25 °C
188 -55 ... 175 55/175/56
Current is limited by bondwire; with an R thJC=0.8 K/W the chip is able to carry 162 A.
See figure 3 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.03
page 1
2009-12-17
IPB037N06N3 G
IPI040N06N3 G IPP040N06N3 G
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm² cooling area 4) 0.8 62 40 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=1 mA V GS(th) V DS=V GS, I D=90 µA V DS=60 V, V GS=0 V, T j=25 °C V DS=60 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=90 A V GS=10 V, I D=90 A, (SMD) Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=90 A 60 2 3 4 V
Zero gate voltage drain current
I DSS
-
0.1
1
µA
61
10 1 3.3 3.0 1.3 121
100 100 4 3.7 Ω S nA mΩ
www.DataSheet4U.com
Rev. 1.03
page 2
2009-12-17
IPB037N06N3 G
IPI040N06N3 G IPP040N06N3 G
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 5) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge
5)
C iss C oss C rss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=90 A, R G=3.5 Ω V GS=0 V, V DS=30 V, f =1 MHz
-
8000 1700 58 30 70 40 5
11000 pF 2300 87 ns
Q gs Q gd Q sw Qg V plateau Q oss V DD=30 V, V GS=0 V V DD=30 V, I D=90 A, V GS=0 to 10 V
-
42 9 27 98 5.3 79
-
nC
V nC
IS I S,pulse V SD t rr Q rr
T C=25 °C V GS=0 V, I F=90 A, T j=25 °C V R=30 V, IF=50A, di F/dt =100 A/µs
-
0.97 125 110
90 360 1.2 -
A
V ns nC
www.DataSheet4U.com
See figure 16 for gate charge parameter definition
Rev. 1.03
page 3
2009-12-17
IPB037N06N3 G
IPI040N06N3 G IPP040N06N3 G
1 Power dissipation P tot=f(T C)
2 Drain current I D=f(T C); V GS≥10 V
200
100
160
80
120
60
P tot [W]
80
I D [A]
40 40 20 0 0 50 100 150 200 0 0 50 100 150 200
T C [°C]
T C [°C]
3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p
103
limited by on-state resistance 1 µs 10 µs
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
100
0.5
10
2
100 µs 10 ms 1 ms 0.2
Z thJC [K/W]
I D [A]
DC
0.1
10
1
10-1
0.05 0.02 0.01 single pulse
www.DataSheet4U.com 100
10-1 10
-1
10-2 10
0
10
1
10
2
10-5
10-4
10-3
10-2
10-1
100
V DS [V]
t p [s]
Rev. 1.03
page 4
2009-12-17
IPB037N06N3 G
IPI040N06N3 G IPP040N06N3 G
5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS
320
10 V 8V 7V 6.5 V
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS
15
5.5 V
5V 4.5 V
12 240
R DS(on) [mΩ ]
6V
9
I D [A]
160
6
6.5 V
6V
5.5 V
80 3
5V 10 V
7V 8V
4.5 V
0 0 1 2 3 4 5
0 0 50 100 150
V DS [V]
I D [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
320
8 Typ. forward transconductance g fs=f(I D); T j=25 °C
200
160 240
120 160
g fs [S]
80
175 °C 25 °C
www.DataSheet4U.com 80
I D [A]
40
0 0 2 4 6
0 0 50 100 150
V GS [V]
I D [A]
Rev. 1.03
page 5
2009-12-17
IPB037N06N3 G
IPI040N06N3 G IPP040N06N3 G
9 Drain-source on-state resistance R DS(on)=f(T j); I D=90 A; V GS=10 V
10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D
8
4
.