ST2N6520

ST 2N6520 www.DataSheet4U.com PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO -IC -IB Ptot Tj TS Value 350 350 5 500 250 625 150 -55 to +150 Unit V V V mA mA mW O O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2N6520 Characteristics at Tamb=25 OC Symbol DC Current Gain at -VCE=10V, -IC=1mA at -VCE=10V, -IC=10mA at -VCE=10V, -IC=30mA at -VCE=10V, -IC=50mA at -VCE=10V, -IC=100mA Collector Base Breakdown Voltage at -IC=100μA Collector Emitter Breakdown Voltage at -IC=1mA Emitter Base Breakdown Voltage at -IE=10μA Collector Cutoff Current at -VCB=250V Emitter Cutoff Current at -VEB=4V Collector Base Capacitance at -VCB=20V, f=1MHz Emitter Base Capacitance at –VEB=0.5V, f=1MHz Base Emitter Saturation Voltage at -IC=10mA, -IB=1mA at -IC=20mA, -IB=2mA at -IC=30mA, -IB=3mA Collector Emitter Saturation Voltage at -IC=10mA, -IB=1mA at -IC=20mA, -IB=2mA at -IC=30mA, -IB=3mA at -IC=50mA, -IB=5mA Base Emitter On Voltage at -VCE=10V, -IC=100mA Current Gain Bandw...