ST2N6517

ST 2N6517 www.DataSheet4U.com NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot Tj TS Value 350 350 6 500 625 150 -55 to +150 Unit V V V mA mW O O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2N6517 Characteristics at Tamb=25 oC Symbol DC Current Gain at VCE=10V, IC=1mA at VCE=10V, IC=10mA at VCE=10V, IC=30mA at VCE=10V, IC=50mA at VCE=10V, IC=100mA Collector Base Breakdown Voltage at IC=100μA Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=250V Emitter Cutoff Current at VEB=5V Collector Base Capacitance at VCB=20V, f=1MHz Base Emitter Saturation Voltage at IC=10mA, IB=1mA at IC=20mA, IB=2mA at IC=30mA, IB=3mA Collector Emitter Saturation Voltage at IC=10mA, IB=1mA at IC=20mA, IB=2mA at IC=30mA, IB=3mA at IC=50mA, IB=5mA Base Emitter On Voltage at VCE=10V, IC=100mA Current Gain Bandwidth Product at VCE=20V, IC=10mA, f=20MHz fT 40 200 MHz VBE(on) 2 V VCE(sat) VCE(sat) VCE(sat) VCE(sat) 0...