ST 2N5400 / 2N5401
www.DataSheet4U.com
PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage ampli...
ST 2N5400 / 2N5401
www.DataSheet4U.com
PNP Silicon Epitaxial Planar
Transistors for general purpose, high voltage amplifier applications. As complementary types the
NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these
transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25oC) Symbol Collector Emitter Voltage ST 2N5400 ST 2N5401 Collector Base Voltage ST 2N5400 ST 2N5401 Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
1)
Value 120 150 130 160 5 600 625
1)
Unit V V V V V mA mW
o o
-VCEO -VCEO -VCBO -VCBO -VEBO -IC Ptot Tj TS
150 -55 to +150
C C
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated: 07/12/2002
ST 2N5400 / 2N5401
Characteristics at Tamb=25 oC Symbol DC Current Gain at-VCE=5V, -IC=1mA at -VCE=5V, -IC=10mA at -VCE=5V, -IC=50mA ST 2N5400 ST 2N5401 ST 2N5400 ST 2N5401 ST 2N5400 ST 2N5401 Collector Emitter Breakdown Voltage at -IC=1mA Collector Base Breakdown Voltage at -IC=100μA Emitter Base Breakdown Voltage at -IE=10μA Collector Cutoff Current at -VCB=100V at -VCB=120V Emitter Cutoff Current at -VEB=3V Collector Saturation Voltage at -IC=10mA, -IB=1mA at -IC=50mA, -IB=5mA Base Saturation Voltag...