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IDT04S60C Dataheets PDF



Part Number IDT04S60C
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description 2nd Generation thinQ SiC Schottky Diode
Datasheet IDT04S60C DatasheetIDT04S60C Datasheet (PDF)

IDT04S60C www.DataSheet4U.com 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 5mA2) Product Summary V DC Qc IF 600 8 4 V nC A PG-TO220-2-2 thinQ! 2G Di.

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IDT04S60C www.DataSheet4U.com 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 5mA2) Product Summary V DC Qc IF 600 8 4 V nC A PG-TO220-2-2 thinQ! 2G Diode specially designed for fast switching applications like: • CCM PFC • Motor Drives Type IDT04S60C Package PG-TO220-2-2 Marking D04S60C Pin 1 C Pin 2 A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous forward current RMS forward current Symbol Conditions IF I F,RMS T C<140 °C f =50 Hz T C=25 °C, t p=10 ms T j=150 °C, T C=100 °C, D =0.1 T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms Value 4 5.6 32 Unit A Surge non-repetitive forward current, I F,SM sine halfwave Repetitive peak forward current Non-repetitive peak forward current i ²t value Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Mounting torque Rev. 2.0 I F,RM I F,max ∫i 2dt V RRM dv/ dt P tot T j, T stg 18 132 5.1 600 A2s V V/ns W °C Mcm 2006-03-08 V R = 0….480V T C=25 °C 50 42 -55 ... 175 M3 and M3.5 screws page 1 60 IDT04S60C www.DataSheet4U.com Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA leaded 1.6mm (0.063 in.) from case for 10s 3.6 62 K/W Values typ. max. Unit T sold - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage Diode forward voltage V DC VF I R=0.05 mA I F=4 A, T j=25 °C I F=4 A, T j=150 °C Reverse current IR V R=600 V, T j=25 °C V R=600 V, T j=150 °C 600 1.7 2 0.5 2 1.9 2.4 50 500 µA V AC characteristics Total capacitive charge Switching time3) Qc tc C V R=400 V,I F≤I F,max, di F/dt =200 A/µs, T j=150 °C V R=1 V, f = MHz V R=300 V, f =1 MHz V R=600 V, f =1 MHz 8 130 20 20 <10 nC ns pF 1) 2) 3) J-STD20 and JESD22 All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA. tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to absence of minority carrier injection. 4) Only capacitive charge occuring, guaranteed by design. Rev. 2.0 page 2 2006-03-08 IDT04S60C www.DataSheet4U.com 1 Power dissipation P tot=f(T C) parameter: RthJC(max) 45 40 35 30 2 Diode forward current I F=f(T C); T j≤175 °C parameter: R thJC(max); V F(max) 10 9 8 7 6 P tot [W] I F [A] 25 50 75 100 125 150 175 200 25 20 15 10 5 0 5 4 3 2 1 0 25 50 75 100 125 150 175 200 T C [°C] T C [°C] 3 Typ. for.


B57964S IDT04S60C IDT05S60C


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