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IDT04S60C www.DataSheet4U.com
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 5mA2)
Product Summary V DC Qc IF 600 8 4 V nC A
PG-TO220-2-2
thinQ! 2G Diode specially designed for fast switching applications like: • CCM PFC • Motor Drives Type IDT04S60C Package PG-TO220-2-2 Marking D04S60C Pin 1 C Pin 2 A
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous forward current RMS forward current Symbol Conditions IF I F,RMS T C<140 °C f =50 Hz T C=25 °C, t p=10 ms T j=150 °C, T C=100 °C, D =0.1 T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms Value 4 5.6 32 Unit A
Surge non-repetitive forward current, I F,SM sine halfwave Repetitive peak forward current Non-repetitive peak forward current i ²t value Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Mounting torque Rev. 2.0 I F,RM I F,max ∫i 2dt V RRM dv/ dt P tot T j, T stg
18 132 5.1 600 A2s V V/ns W °C Mcm 2006-03-08
V R = 0….480V T C=25 °C
50 42 -55 ... 175
M3 and M3.5 screws page 1
60
IDT04S60C www.DataSheet4U.com
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA leaded 1.6mm (0.063 in.) from case for 10s 3.6 62 K/W Values typ. max. Unit
T sold
-
-
260
°C
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage Diode forward voltage V DC VF I R=0.05 mA I F=4 A, T j=25 °C I F=4 A, T j=150 °C Reverse current IR V R=600 V, T j=25 °C V R=600 V, T j=150 °C 600 1.7 2 0.5 2 1.9 2.4 50 500 µA V
AC characteristics Total capacitive charge Switching time3) Qc tc C V R=400 V,I F≤I F,max, di F/dt =200 A/µs, T j=150 °C V R=1 V, f = MHz V R=300 V, f =1 MHz V R=600 V, f =1 MHz 8 130 20 20 <10 nC ns pF
1) 2) 3)
J-STD20 and JESD22 All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA.
tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to absence of minority carrier injection.
4)
Only capacitive charge occuring, guaranteed by design.
Rev. 2.0
page 2
2006-03-08
IDT04S60C www.DataSheet4U.com
1 Power dissipation P tot=f(T C) parameter: RthJC(max)
45 40 35 30
2 Diode forward current I F=f(T C); T j≤175 °C parameter: R thJC(max); V F(max)
10 9 8 7 6
P tot [W]
I F [A]
25 50 75 100 125 150 175 200
25 20 15 10 5 0
5 4 3 2 1 0 25 50 75 100 125 150 175 200
T C [°C]
T C [°C]
3 Typ. for.