SIHFS11N50A

www.vishay.com IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 52 13 18 Single 0.52 D2PAK (TO-263) D G FEATURES Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Available Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Available Effective Coss Specified Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details. GD S S N-Channel MOSFET APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching TYPICAL SMPS TOPOLOGIES Two Transistor Forward Half and Full Bridge Power Factor Correction Boost ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) SiHFS11N50A-GE3 IRFS11N50APbF D2PAK (TO-263) SiHFS11N50ATRR-GE3a IRFS11N50ATRRPa D2PAK (TO-263) SiHFS11N50ATRL-GE3a IRFS11N50ATRLPa ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating ...