(1N4460 - 1N4496) SILICON ZENER DIODES
Certificate TH97/10561QM
Certificate TW00/17276EM
1N4460 - 1N4496 and 1N6485 - 1N6491
VZ : 3.3 - 200 Volts PD : 1.5 Wa...
Description
Certificate TH97/10561QM
Certificate TW00/17276EM
1N4460 - 1N4496 and 1N6485 - 1N6491
VZ : 3.3 - 200 Volts PD : 1.5 Watts
FEATURES :
* Silicon power zener diodes * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free
SILICON ZENER DIODES
M1A
0.085(2.16) 0.075(1.91)
1.00 (25.4) MIN.
0.138(3.51) 0.122(3.10)
MECHANICAL DATA :
* Case : M1A Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.20 gram (approximately)
0.024(0.60) 0.022(0.55)
1.00 (25.4) MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
(Rating at 25 °C ambient temperature unless otherwise specified)
Rating
Power Dissipation at Ta = 25 °C Maximum Forward Voltage at I F = 200 mA Thermal Resistance , Junction to Lead (Note 1) Operating Temperature Storage Temperature Range
Note : (1) At 3/8"(10 mm) lead length form body.
Symbol
PD VF RӨJA TJ TSTG
Value
1.5 1.0 42 - 65 to + 175 - 65 to + 175
Unit
W V °C/W °C °C
Fig. 1 POWER TEMPERATURE DERATING CURVE
PD, MAXIMUM DISSIPATION (W) 1.5 1.2 0.9 0.6
L = 3/8" (10 mm)
0.3 0
0
25
50
75
100
125
150
175
Ta, AMBIENT TEMPERATURE (°C)
Page 1 of 2
Rev. 03 : November 2, 2006
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Certificate TH97/10561QM
Certificate TW00/17276EM
ELECTRICAL CHARACTERISTICS (Rating at 25 °C ambient temperature unles...
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