FGH80N60FD

FGH80N60FD — 600 V Field Stop IGBT FGH80N60FD 600 V Field Stop IGBT Features High Current Capability Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A High Input Impedance Fast Switching RoHS Complaint Applications Induction Heating, PFC, Telecom, ESS E C G November 2013 General Description Using novel field stop IGBT technology, Fairchild's field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential. C COLLECTOR (FLANGE) Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25C @ TC = 100C @ TC = 25C @ TC = 25C @ TC = 100C Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC(IGBT) RJC(Diode) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient G E Ratings 600  20 80 40 160 290 116 -55 to +150 -55 to +150 300 Typ. -- -- Max. 0.43 1.5 40 Unit V V A A A W W C C C Unit C/W C/W C/W ©2007 Fairchild Semiconductor Corporation FGH80N60FD Rev. C2 1 www.fairchildsemi.com FGH80N60FD — 6...