IGBT
SEMiX252GB126HDs
SEMiX® 2s
Trench IGBT Modules
SEMiX252GB126HDs
Features
• Homogeneous Si • Trench = Trenchgate technol...
Description
SEMiX252GB126HDs
SEMiX® 2s
Trench IGBT Modules
SEMiX252GB126HDs
Features
Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature
coefficient High short circuit capability UL recognised file no. E63532
Typical Applications*
AC inverter drives UPS Electronic Welding
Remarks
Case temperatur limited to TC=125°C max.
Not for new design
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 150 °C
Tc = 25 °C Tc = 80 °C
ICnom
ICRM
ICRM = 2xICnom
VGES tpsc Tj
VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V
Tj = 125 °C
Inverse diode
IF
Tj = 150 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS) Tstg
Tterminal = 80 °C
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES
Cies Coes Cres QG RGint td(on) tr Eon td(off) tf
IC = 150 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 125 °C
chiplevel
Tj = 25 °C Tj = 125 °C
VGE = 15 V chiplevel
Tj = 25 °C Tj = 125 °C
VGE=VCE, IC = 6 mA
VGE = 0 V VCE = 1200 V
Tj = 25 °C Tj = 125 °C
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V IC = 150 A VGE = ±15 V RG on = 3 RG off = 3
Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C
Eoff
Tj = 125 °C
Rth(j-c)
per IGBT
Values
1200 242 170 150 300 -20 ... 20
10
-40 ... 150
228 158 150 300 1000 -40 ... 150
600 -40 ... 125
4000
Unit
V A A A A V
µs
°C
A A A A A ...
Similar Datasheet
- SEMIX252GB126HD Trench IGBT - Semikron International
- SEMIX252GB126HDS IGBT - Semikron International