ST9402

N Channel Enhancement Mode MOSFET ST9402 3.6A DESCRIPTION ST9402 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 FEATURE z z z S 2 2.Source 3.Drain z z 20V/3.6A, RDS(ON) = 76mΩ @VGS = 4.5V 20V/3.1A, RDS(ON) = 90 mΩ @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 3 D G 1 1.Gate PART MARKING SOT-23 3 S02YA 1 Y: Year Code 2 A: Process Code ORDERING INFORMATION Part Number ST9402SRG Package SOT-23 Part Marking S02YA ※ Process Code : A ~ Z ; a ~ z ※ ST9402SRG S : SOT23 ; R : Tape Reel ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST9402 2005. V1 www.DataSheet.in N Channel Enhancement Mode MOSFET ST9402 3.6A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature...