N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Description
STB8NA50
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STB8NA50
n n n n n n n n
V DSS 500 V
R DS(on ) < 0.85 Ω
ID 8 A
n
TYPICAL RDS(on) = 0.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD THROUGH-HOLE I2PAK (TO...
