FDP047N08

FDP047N08 — N-Channel PowerTrench® MOSFET FDP047N08 N-Channel PowerTrench® MOSFET 75 V, 164 A, 4.7 mΩ November 2013 Features RDS(on) = 3.8 mΩ (Typ.) @ VGS = 10 V, ID = 80 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter FDP047N08 VDSS VGSS ID IDM EAS dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 1) (Note 2) (Note 3) 75 ±20 164* 116* 656 670 6.0 268 1.79 TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds -55 to +175 300 *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A. Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, J...