MBD54DWT1

MBD54DWT1 Preferred Device Dual Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features http://onsemi.com Extremely Fast Switching Speed Low Forward Voltage − 0.35 V @ IF = 10 mAdc Pb−Free Package is Available 30 VOLTS DUAL HOT−CARRIER DETECTOR AND SWITCHING DIODES Anode 1 6 Cathode 5 N/C 4 Anode MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Forward Current (DC) Junction Temperature Storage Temperature Range Symbol VR PF 150 1.2 IF TJ Tstg 200 Max 125 Max −55 to +150 mW mW/°C mA °C °C Value 30 Unit V N/C 2 Cathode 3 MARKING DIAGRAM 6 SOT−363 CASE 419B−01 STYLE 6 1 M = Date Code BL M Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1 ORDERING INFORMATION Device MBD54DWT1 MBD54DWT1G Package SOT−363 SOT−363 (Pb−Free) Shipping† 3000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation ...