H9N03LA

IPDH9N03LA G IPSH9N03LA G OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC1) for target application N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance 175 °C operating temperature Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max (SMD version) ID 25 9.2 30 V mΩ A Type IPDH9N03LA G IPSH9N03LA G Package Marking PG-TO252-3-11 H9N03LA PG-TO251-3-11 H9N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C3) I D=30 A, R GS=25 Ω I D=30 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Value 30 30 210 80 6 ±20 52 -55 ... 175 55/175/56 mJ kV/µs V W °C Unit A Rev. 1.0 page 1 2006-05-15 www.DataSheet.in IPDH9N03LA G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS...