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F9530N

International Rectifier
Part Number F9530N
Manufacturer International Rectifier
Description IRF9530N
Published Oct 27, 2010
Detailed Description www.DataSheet.in PD - 91482C IRF9530N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rati...
Datasheet PDF File F9530N PDF File

F9530N
F9530N

Overview
www.
DataSheet.
in PD - 91482C IRF9530N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.
20Ω G ID = -14A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for a...


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