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STP55NE06 STP55NE06FP
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET
TYPE ST P55NE06 ST P55NE06FP
s s s s s s
V DSS 60 V 60 V
R DS(on) < 0.022 Ω < 0.022 Ω
ID 55 A 30 A
TYPICAL RDS(on) = 0.019 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220
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DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value STP55NE06 V DS V DGR V GS ID ID IDM ( • ) P t ot Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor V ISO dv/dt T stg Tj Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature
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Uni t
STP55NE06FP 60 60 ± 20 V V V 30 21 220 35 0.27 2000 7 A A A W W/ C V V/ ns
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55 39 220 130 0.96
-65 to 175 175
( 1) ISD ≤ 55 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
C C 1/9
(•) Pulse width limited by safe operating area
January 1998
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STP55NE06/FP
THERMAL DATA
T O-220 R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case Max 1.15 62.5 0.5 300 TO-220F P 4.28
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C/W C/W C/W o C
Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symb ol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) Single Pulse Avalanche Energy o (starting Tj = 25 C, I D = IAR , VDD = 25 V) Max Valu e 55 200 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symb ol V (BR)DSS I DSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 µ A V GS = 0 Min. 60 1 10 ± 100 Typ . Max. Un it V µA µA nA
Zero G ate Voltage V DS = Max Rating Drain Current (VGS = 0) V DS = Max Rating o C Gate-body Leakage Current (V DS = 0) V GS = ± 20 V
T c = 125
I GSS
ON (∗)
Symb ol V GS(th) R DS( on) ID(o n) Parameter Gate Threshold Voltage V DS = VGS Test Cond ition s ID = 250 µ A ID = 27.5 A 55 Min. 2 Typ . 3 0.019 Max. 4 0.022 Un it V Ω A
Static Drain-source On V GS = 10V Resistance
On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V
DYNAMIC
Symb ol g fs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse T ransfer Capacitance Test Cond ition s V DS > I D(on) x R DS(on) max V DS = 25 V f = 1 MHz I D =27.5 A VGS = 0 Min. 25 Typ . 35 3050 380 100 4000 500 130 Max. Un it S pF pF pF
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STP55NE06/FP
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symb ol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Cond ition s V DD = 30 V ID = 27.5 A R G =4.7 W V GS = 10 V (see test circuit, figure 3) V DD = 48 V I D = 55 A V GS = 10 V Min. Typ . 30 120 80 13 25 Max. 40 160 105 Un it ns ns nC nC nC
SWITCHING OFF
Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Cond ition s V DD = 48 V I D = 55 A R G =4.7 Ω VGS = 10 V (see test circuit, figure 5) Min. Typ . 20 50 75 Max. 30 70 100 Un it ns ns ns
SOURCE DRAIN DIODE
Symb ol I SD I SDM (• ) V SD ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 60 A V GS = 0 110 430 7.5 di/dt = 100 A/µ s I SD = 55 A o Tj = 150 C V DD = 30 V (see test circuit, figure 5) Test Cond ition s Min. Typ . Max. 55 220 1.5 Un it A A V ns µC A
( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
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STP55NE06/FP
Thermal Impedance for TO-220 Thermal Impedance forTO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
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STP55NE06/FP
Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized Gate Threshold Voltage vs Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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STP55NE06/FP
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Ci.