Document
DataSheet.in
FQP6N60
April 2000
QFET
FQP6N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
TM
Features
• • • • • • 6.2A, 600V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
!
"
G
G! DS
! "
" "
TO-220
FQP Series
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQP6N60 600 6.2 3.9 24.8 ±30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
440 6.2 13 4.5 130 1.04 -55 to +150 300
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
Thermal Characteristics
Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.5 -Max 0.96 -62.5 Units °CW °CW °CW
©2000 Fairchild Semiconductor International
Rev. A, April 2000
DataSheet.in
FQP6N60
Electrical CharacteristicsT
Symbol Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------0.53 ------10 100 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 3.1 A VDS = 50 V, ID = 3.1 A
(Note 4)
3.0 ---
-1.2 6.0
5.0 1.5 --
V Ω S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---770 95 10 1000 120 13 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 6.2 A, VGS = 10 V
(Note 4, 5)
VDD = 300 V, ID = 6.2 A, RG = 25 Ω
(Note 4, 5)
--------
20 70 40 45 20 4.9 9.4
50 150 90 100 25 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 6.2 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 6.2 A, dIF / dt = 100 A/µs
(Note 4)
------
---290 2.35
6.2 24.8 1.4 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 21mH, IAS = 6.2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD 6.2A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A, April 2000
DataSheet.in
FQP6N60
Typical Characteristics
10
1
ID , Drain Current [A]
ID , Drain Current [A]
VGS 15 V 10 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
10
1
150
10
0
10
0
25 -55
Notes : 1. VDS = 50V 2. 250 s Pulse Test
10
-1
Notes : 1. 250 s Pulse Test 2. TC = 25
10
-1
10
0
10
1
10
-1
2
4
6
8
10
VDS , Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
5
RDS(ON) [ ], Drain-Source On-Resistance
3
VGS = 10V VGS = 20V
IDR , Reverse Drain Current [A]
4
10
1
2
10
0
150
25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
1
Note : TJ = 25
0 0 2 4 6 8 10 12 14 16
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
1400
1200
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
10
VDS = 120V VDS = 300V VDS = 480V
1000
VGS , Gate-Source Voltage [V]
Ciss
8
Capacitance [pF]
800
Coss
6
600
Notes : 1.