STA92N

DataSheet.in Semiconductor STA92N PNP Silicon Transistor Descriptions High voltage application Features High collector-emitter voltage : VCEO=-300V Complementary pair with STC42N Ordering Information Type NO. STA92N Marking STA92 Package Code T0-92N Outline Dimensions 4.20~4.40 4.20~4.40 unit : mm 2.25 Max. 0.52 Max. 13.50~14.50 0.90 Max. 1.27 Typ. 2.14 Typ. 1 2 3 3.55 Typ 3.09~3.29 0.40 Max. PIN Connections 1. Emitter 2. Base 3. Collector KSD-T0C029-001 1 DataSheet.in STA92N Absolute Maximum Ratings Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range (Ta=25°C) Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating -300 -300 -6 -500 400 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCEO ICBO IEBO hFE * * * Test Condition IC=-1mA, IB=0 VCB=-300V, IE=0 VEB=-6V, IC=0 VCE=-10V, IC=-30mA IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA VCE=-10V, IC=-30mA VCE=-20V, IC=-10mA VCB=-20V, IE=0, f=1MHz Min. Typ. Max. -300 40 -0.7 80 3 -0.1 -0.1 -0.5 -0.9 -0.9 - Unit V µA µA V V V MHz pF VCE(sat) VBE(sat) VBE fT Cob * : Pulse Tester : Pulse Width≤ 300 ㎲, Duty Cycle≤ 2....