DataSheet.in
Semiconductor
STA92N
PNP Silicon Transistor
Descriptions
• High voltage application
Features
• High col...
DataSheet.in
Semiconductor
STA92N
PNP Silicon
Transistor
Descriptions
High voltage application
Features
High collector-emitter voltage : VCEO=-300V Complementary pair with STC42N
Ordering Information
Type NO. STA92N Marking STA92 Package Code T0-92N
Outline Dimensions
4.20~4.40
4.20~4.40
unit : mm
2.25 Max.
0.52 Max.
13.50~14.50
0.90 Max. 1.27 Typ.
2.14 Typ.
1 2 3
3.55 Typ
3.09~3.29
0.40 Max.
PIN Connections 1. Emitter 2. Base 3. Collector
KSD-T0C029-001
1
DataSheet.in
STA92N
Absolute Maximum Ratings
Characteristic
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC TJ Tstg
Rating
-300 -300 -6 -500 400 150 -55~150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
(Ta=25°C)
Symbol
BVCEO ICBO IEBO hFE
* * *
Test Condition
IC=-1mA, IB=0 VCB=-300V, IE=0 VEB=-6V, IC=0 VCE=-10V, IC=-30mA IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA VCE=-10V, IC=-30mA VCE=-20V, IC=-10mA VCB=-20V, IE=0, f=1MHz
Min. Typ. Max.
-300 40 -0.7 80 3 -0.1 -0.1 -0.5 -0.9 -0.9 -
Unit
V µA µA V V V MHz pF
VCE(sat) VBE(sat) VBE fT Cob
* : Pulse Tester : Pulse Width≤ 300 ㎲, Duty Cycle≤ 2....