BLL6H0514L-130

DataSheet.in BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev. 1 — 9 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit. Mode of operation pulsed RF f (MHz) 960 to 1215 1200 to 1400 tp (μs) 128 300 δ (%) 10 10 VDS (V) 50 50 PL (W) 130 130 Gp (dB) 19 17 RLin (dB) 10 10 ηD (%) 54 50 Pdroop(pulse) (dB) 0 0 tr (ns) 15 15 tf (ns) 8 8 1.2 Features and benefits „ „ „ „ „ „ „ „ Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (0.5 GHz to 1.4 GHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications „ Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range DataSheet.in NXP Semiconductors BLL6H0514L(S)-130 LDMOS driver transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Graphic symbol BLL6H0514L-130 (SOT1135A) 1 2 3 2 3 sym112 1 BLL6H0514LS-130 (SOT1135B) 1 2 3 drain gate source [1] 1 2 1 3 sym112 3 2 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name Description BLL6H0514L-130 BLL6H0514LS-130 flanged ceramic p...