SSM9971GD

SSM9971GD Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM9971GD acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. The SSM2310GD is supplied in an RoHS-compliant PDIP-8 package, which is widely used for medium power commercial and industrial applications, where throughhole insertion into the board is required. 60V 50mΩ 5A Pb-free; RoHS-compliant SO-8 D2 D2 D1 D1 G2 PDIP-8 S1 S2 G1 ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current 1,2 3 3 , Value 60 ± 25 T A = 25°C TA = 70°C 5 3.2 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total power dissipation , TA = 25°C Linear derating factor Storage temperature range Operating junction temperature range THERMAL CHARACTERISTICS Symbol RΘJA Parameter Maximum thermal resistance, junction-ambient 3 Value 62.5 Units °C/W Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C. 2.Pulse width <300us, duty cycle <2%. 3.Mounted on a square inch of copper pad on FR4 board; 90°C/W when mounted on the minimum pad area required for soldering. 10/16/2005 Rev.3.1 www.SiliconStandard.com 1 of 5 SSM9971GD ELECTRICAL CHARACTERISTICS Symbol BVDSS Parameter Drain-source breakdown vol...