STW34NM60N

DataSheet.in STF34NM60N STP34NM60N, STW34NM60N N-channel 600 V, 0.092 Ω , 29 A MDmesh™ II Power MOSFET TO-220, TO-247, TO-220FP Preliminary data Features Type STF34NM60N STP34NM60N STW34NM60N ■ ■ ■ VDSS 600 V 600 V 600 V RDS(on) max. 0.105 Ω 0.105 Ω 0.105 Ω ID 29 A 29 A 29 A PTOT 40 W 210 W 210 W 2 1 3 1 3 2 TO-247 TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 1 2 TO-220FP Application ■ Switching applications Figure 1. Internal schematic diagram Description These devices are made using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. $ ' 3 !-V Table 1. Device summary Marking Package TO-220FP TO-220 TO-247 Packaging Order codes STF34NM60N STP34NM60N STW34NM60N 34NM60N Tube September 2010 Doc ID 17740 Rev 2 1/12 www.st.com 12 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. DataSheet.in Contents STF34NM60N, STP34NM60N, STW34NM60N Contents 1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test ci...