www.vishay.com
IRLR014, IRLU014, SiHLR014, SiHLU014
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 5.0 V
8.4 3.5 6.0 Single
0.20
D
DPAK (TO-252)
D
IPAK (TO-251)
D
G
GS
GD S
S N-Channel MOSFET
FEATURES • Dynamic dV/dt Rating
• Surface Mount (IRLR014, SiHLR014)
• Straight Lead (IRLU014, SiHLU014)
• Available in Tape and Reel
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU, SiHLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note a. See device orientation.
DPAK (TO-252) SiHLR014-GE3 IRLR014PbF SiHLR014-E3
DPAK (TO-252) IRLR014TRPbFa SiHLR014T-E3a
DPAK (TO-252) SiHLR014TRL-GE3 IRLR014TRLPbFa SiHLR014TL-E3a
IPAK (TO-251) SiHLU014-GE3 IRLU014PbF SiHLU014-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Currenta
VGS at 5.0 V
TC = 25 °C TC = 100 °C
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc
TC = 25 °C TA = 25 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
VDS VGS ID IDM
EAS PD dV/dt TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 924 μH, Rg = 25 , IAS = 7.7 A (see fig. 12). c. ISD 10 A, dI/dt 90 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT 60 ± 10 7.7 4.9 31 0.20
0.020 27.4 25 2.5 4.5 - 55 to + 150 260
UNIT V
A
W/°C mJ W V/ns °C
S13-0164-Rev. D, 04-Feb-13
1
Document Number: 91321
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
IRLR014, IRLU014, SiHLR014, SiHLU014
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient (PCB Mount)a
RthJA RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note a. When mounted on 1" square PCB (FR-4 or G-10 material).
MIN. -
TYP. -
MAX. 110 50 5.0
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance Dynamic
VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = - 250 μA
VGS = ± 10 V
VDS = 60 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, TJ = 125 °C
VGS = 5.0 V
ID = 4.6 Ab
VGS = 4.0 V
ID = 3.9 Ab
VDS = 25 V, ID = 4.6 A
60 -
-V
- 0.073 - V/°C
1.0 - 2.0 V
- - ± 100 nA
- - 25 μA
- - 250
- - 0.20
- - 0.28
3.4 -
-S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Internal Drain Inductance
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf
LD
Internal Source Inductance Drain-Source Body Diode Characteristics
LS
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
VGS = 5.0 V
ID = 10 A, VDS = 48 V, see fig. 6 and 13b
VDD = 30 V, ID = 10 A, Rg = 12 , RD = 2.8 , see fig. 10b
Between lead, 6 mm (0.25") from package and center of die contactc
D
G S
- 400 - 170 - pF - 42 - - 8.4 - - 3.5 nC - - 6.0 - 9.3 - 110 -
ns - 17 - 26 -
- 4.5 nH
- 7.5 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol showing the
integral reverse
Pulsed Diode Forward Currenta
ISM p - n junction diode
D
G S
- - 7.7 A
- - 31
Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time
VSD
TJ = 25 °C, IS = 7.7 A, VGS = 0 Vb
- - 1.6 V
trr Qrr
- 65 130 ns TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μsb - 0.33 0.65 μC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %.
S13-0164-Rev. D, 04-.