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SIHLR014 Dataheets PDF



Part Number SIHLR014
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet SIHLR014 DatasheetSIHLR014 Datasheet (PDF)

www.vishay.com IRLR014, IRLU014, SiHLR014, SiHLU014 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 5.0 V 8.4 3.5 6.0 Single 0.20 D DPAK (TO-252) D IPAK (TO-251) D G GS GD S S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Surface Mount (IRLR014, SiHLR014) • Straight Lead (IRLU014, SiHLU014) • Available in Tape and Reel • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching • M.

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www.vishay.com IRLR014, IRLU014, SiHLR014, SiHLU014 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 5.0 V 8.4 3.5 6.0 Single 0.20 D DPAK (TO-252) D IPAK (TO-251) D G GS GD S S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Surface Mount (IRLR014, SiHLR014) • Straight Lead (IRLU014, SiHLU014) • Available in Tape and Reel • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU, SiHLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. DPAK (TO-252) SiHLR014-GE3 IRLR014PbF SiHLR014-E3 DPAK (TO-252) IRLR014TRPbFa SiHLR014T-E3a DPAK (TO-252) SiHLR014TRL-GE3 IRLR014TRLPbFa SiHLR014TL-E3a IPAK (TO-251) SiHLU014-GE3 IRLU014PbF SiHLU014-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 5.0 V TC = 25 °C TC = 100 °C Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc TC = 25 °C TA = 25 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s VDS VGS ID IDM EAS PD dV/dt TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 924 μH, Rg = 25 , IAS = 7.7 A (see fig. 12). c. ISD  10 A, dI/dt  90 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). LIMIT 60 ± 10 7.7 4.9 31 0.20 0.020 27.4 25 2.5 4.5 - 55 to + 150 260 UNIT V A W/°C mJ W V/ns °C S13-0164-Rev. D, 04-Feb-13 1 Document Number: 91321 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com IRLR014, IRLU014, SiHLR014, SiHLU014 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient Maximum Junction-to-Ambient (PCB Mount)a RthJA RthJA Maximum Junction-to-Case (Drain) RthJC Note a. When mounted on 1" square PCB (FR-4 or G-10 material). MIN. - TYP. - MAX. 110 50 5.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = - 250 μA VGS = ± 10 V VDS = 60 V, VGS = 0 V VDS = 48 V, VGS = 0 V, TJ = 125 °C VGS = 5.0 V ID = 4.6 Ab VGS = 4.0 V ID = 3.9 Ab VDS = 25 V, ID = 4.6 A 60 - -V - 0.073 - V/°C 1.0 - 2.0 V - - ± 100 nA - - 25 μA - - 250 - - 0.20  - - 0.28 3.4 - -S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD Internal Source Inductance Drain-Source Body Diode Characteristics LS VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 5.0 V ID = 10 A, VDS = 48 V, see fig. 6 and 13b VDD = 30 V, ID = 10 A, Rg = 12 , RD = 2.8 , see fig. 10b Between lead, 6 mm (0.25") from package and center of die contactc D G S - 400 - 170 - pF - 42 - - 8.4 - - 3.5 nC - - 6.0 - 9.3 - 110 - ns - 17 - 26 - - 4.5 nH - 7.5 - Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse Pulsed Diode Forward Currenta ISM p - n junction diode D G S - - 7.7 A - - 31 Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time VSD TJ = 25 °C, IS = 7.7 A, VGS = 0 Vb - - 1.6 V trr Qrr - 65 130 ns TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μsb - 0.33 0.65 μC ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. S13-0164-Rev. D, 04-.


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