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EDS2532EEBH-9ATT Dataheets PDF



Part Number EDS2532EEBH-9ATT
Manufacturers Elpida Memory
Logo Elpida Memory
Description 256M bits SDRAM WTR
Datasheet EDS2532EEBH-9ATT DatasheetEDS2532EEBH-9ATT Datasheet (PDF)

www.DataSheet4U.com DATA SHEET 256M bits SDRAM WTR (Wide Temperature Range) EDS2532EEBH-9ATT (8M words × 32 bits) Specifications • Density: 256M bits • Organization  2M words × 32 bits × 4 banks • Package: 90-ball FBGA  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V • Clock frequency: 111MHz (max.) • 2KB page size  Row address: A0 to A11  Column address: A0 to A8 • Four internal banks for concurrent operation • Interface: LVCMOS • Burst lengths (BL): 1, 2, 4, 8, full pa.

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www.DataSheet4U.com DATA SHEET 256M bits SDRAM WTR (Wide Temperature Range) EDS2532EEBH-9ATT (8M words × 32 bits) Specifications • Density: 256M bits • Organization  2M words × 32 bits × 4 banks • Package: 90-ball FBGA  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V • Clock frequency: 111MHz (max.) • 2KB page size  Row address: A0 to A11  Column address: A0 to A8 • Four internal banks for concurrent operation • Interface: LVCMOS • Burst lengths (BL): 1, 2, 4, 8, full page • Burst type (BT):  Sequential (1, 2, 4, 8, full page)  Interleave (1, 2, 4, 8) • /CAS Latency (CL): 2, 3 • Precharge: auto precharge option for each burst access • Driver strength: half/quarter • Refresh: auto-refresh, self-refresh • Refresh cycles: 4096 cycles/64ms  Average refresh period: 15.6µs • Operating ambient temperature range  TA = –20°C to +85°C Pin Configurations /xxx indicate active low signal. 90-ball FBGA 1 2 3 4 5 6 7 8 9 EO Features A DQ26 DQ24 VSS VDD DQ23 DQ21 VDDQ VSSQ DQ19 DQ22 DQ20 VDDQ DQ17 DQ18 VDDQ NC A2 A10 NC BA0 /CAS VDD DQ6 DQ1 B DQ28 VDDQ VSSQ C VSSQ DQ27 DQ25 D VSSQ DQ29 DQ30 E VDDQ DQ31 NC A3 A6 NC A9 NC VSS DQ16 VSSQ DQM2 VDD A0 BA1 /CS A1 A11 /RAS F VSS DQM3 • ×32 organization • Single pulsed /RAS • Burst read/write operation and burst read/single write operation capability • Byte control by DQM • Wide temperature range  TA = –20°C to +85°C Document No. E0821E20 (Ver. 2.0) Date Published February 2006 (K) Japan Printed in Japan URL: http://www.elpida.com L G A4 A5 A8 CKE NC H A7 J CLK This product became EOL in September, 2007. Elpida Memory, Inc. 2005-2006 Pr K L M N P R DQM1 /WE DQM0 DQ7 VSSQ DQ5 VDDQ DQ3 VDDQ VDDQ DQ8 VSSQ DQ10 DQ9 VSSQ DQ12 DQ14 DQ11 VDDQ VSSQ VDDQ VSSQ DQ4 VDD DQ0 DQ2 od DQ13 DQ15 VSS (Top view) Address inputs Bank select address Data-input/output Chip select Row address strobe Column address strobe Write enable DQ mask enable Clock enable Clock input Power for internal circuit Ground for internal circuit Power for DQ circuit Ground for DQ circuit No connection A0 to A11 BA0, BA1 DQ0 to DQ31 /CS /RAS /CAS /WE DQM0 to DQM3 CKE CLK VDD VSS VDDQ VSSQ NC uc t EDS2532EEBH-9ATT www.DataSheet4U.com Ordering Information Part number EDS2532EEBH-9ATT-E Supply voltage 1.8V Organization (words × bits) Internal Banks 8M × 32 4 Clock frequency MHz (max.) 111 /CAS latency 2, 3 Package 90-ball FBGA Part Number E D S 25 32 E E BH - 9A TT - E Elpida Memory Type D: Monolithic Device Environment Code E: Lead Free EO Product Family S: SDRAM Spec. Detail TT: WTR (−20 to +85˚C) Density / Bank 25: 256M/4-bank, 4K Rows Organization 32: x32 Speed 9A: 111MHz/CL2, CL3 Power Supply, Interface E: 1.8V, LVCMOS Die Rev. Package BH: FBGA(Board Type) Data Sheet E0821E20 (Ver. 2.0) L Pr od uc t 2 EDS2532EEBH-9ATT www.DataSheet4U.com CONTENTS Specifications.................................................................................................................................................1 Features.........................................................................................................................................................1 Pin Configurations .........................................................................................................................................1 Ordering Information......................................................................................................................................2 Part Number ..................................................................................................................................................2 Electrical Specifications.................................................................................................................................4 Block Diagram ...............................................................................................................................................9 Pin Function.................................................................................................................................................10 Command Operation ...................................................................................................................................12 Simplified State Diagram .............................................................................................................................21 Mode Register and Extended Mode Register Configuration.......................................................................22 Power-up sequence.....................................................................................................................................24 Operation of the SDRAM.............................................................................................................................25 Timing Waveforms..........................................................................................................................


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