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EDS2532AABJ-75 Dataheets PDF



Part Number EDS2532AABJ-75
Manufacturers Elpida Memory
Logo Elpida Memory
Description 256M bits SDRAM
Datasheet EDS2532AABJ-75 DatasheetEDS2532AABJ-75 Datasheet (PDF)

www.DataSheet4U.com DATA SHEET 256M bits SDRAM EDS2532AABJ-75 (8M words × 32 bits) Specifications • Density: 256M bits • Organization ⎯ 2M words × 32 bits × 4 banks • Package: 90-ball FBGA ⎯ Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 3.3V ± 0.3V • Clock frequency: 133MHz (max.) • 2KB page size ⎯ Row address: A0 to A11 ⎯ Column address: A0 to A8 • Four internal banks for concurrent operation • Interface: LVTTL • Burst lengths (BL): 1, 2, 4, 8, full page • Burst type (BT): ⎯ Sequenti.

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www.DataSheet4U.com DATA SHEET 256M bits SDRAM EDS2532AABJ-75 (8M words × 32 bits) Specifications • Density: 256M bits • Organization ⎯ 2M words × 32 bits × 4 banks • Package: 90-ball FBGA ⎯ Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 3.3V ± 0.3V • Clock frequency: 133MHz (max.) • 2KB page size ⎯ Row address: A0 to A11 ⎯ Column address: A0 to A8 • Four internal banks for concurrent operation • Interface: LVTTL • Burst lengths (BL): 1, 2, 4, 8, full page • Burst type (BT): ⎯ Sequential (1, 2, 4, 8, full page) ⎯ Interleave (1, 2, 4, 8) • /CAS Latency (CL): 2, 3 • Precharge: auto precharge operation for each burst access • Refresh: auto-refresh, self-refresh • Refresh cycles: 4096 cycles/64ms ⎯ Average refresh period: 15.6μs • Operating ambient temperature range ⎯ TA = 0°C to +70°C Pin Configurations /xxx indicates active low signal. 90-ball FBGA 1 2 3 4 5 6 7 8 9 A DQ26 DQ24 VSS VDD DQ23 DQ21 VDDQ VSSQ DQ19 DQ22 DQ20 VDDQ DQ17 DQ18 VDDQ NC A2 A10 NC BA0 /CAS VDD DQ6 DQ1 DQ16 VSSQ DQM2 VDD A0 BA1 /CS A1 A11 /RAS EO Features B DQ28 VDDQ VSSQ C VSSQ DQ27 DQ25 D VSSQ DQ29 DQ30 E VDDQ DQ31 NC A3 A6 NC A9 NC VSS F VSS DQM3 • ×32 organization • Single pulsed /RAS • Burst read/write operation and burst read/single write operation capability • Byte control by DQM Document No. E0508E40 (Ver. 4.0) Date Published December 2005 (K) Japan Printed in Japan URL: http://www.elpida.com L G A4 A5 A8 CKE NC H A7 J CLK K DQM1 /WE DQM0 DQ7 VSSQ DQ5 VDDQ DQ3 VDDQ Pr L M N P R VDDQ DQ8 VSSQ DQ10 DQ9 VSSQ DQ12 DQ14 DQ11 VDDQ VSSQ DQ13 DQ15 VSS VDDQ VSSQ DQ4 VDD DQ0 DQ2 This product became EOL in March, 2007. ©Elpida Memory, Inc. 2004-2005 od A0 to A11 BA0, BA1 DQ0 to DQ31 /CS /RAS /CAS /WE DQM0 to DQM3 CKE CLK VDD VSS VDDQ VSSQ NC (Top view) Address inputs Bank select address Data-input/output Chip select Row address strobe Column address strobe Write enable DQ mask enable Clock enable Clock input Power for internal circuit Ground for internal circuit Power for DQ circuit Ground for DQ circuit No connection t uc EDS2532AABJ-75 www.DataSheet4U.com Ordering Information Part number EDS2532AABJ-75-E EDS2532AABJ-75L-E Supply voltage 3.3V Organization (words × bits) Internal Banks 8M × 32 4 Clock frequency MHz (max.) 133 100 133 100 /CAS latency 3 2 3 2 Package 90-ball FBGA Part Number E D S 25 32 A A BJ - 75 L - E EO Elpida Memory Type D: Monolithic Device Environment Code E: Lead Free Power Consumption Blank: Normal L: Low Power Speed 75: 133MHz/CL3 100MHz/CL2 Product Code S: SDRAM Density / Bank 25: 256M/4-bank, 4K Rows Bit Organization 32: x32 L Pr od 2 Voltage, Interface A: 3.3V, LVTTL Die Rev. Package BJ: FBGA(Board Type) t uc Data Sheet E0508E40 (Ver. 4.0) EDS2532AABJ-75 www.DataSheet4U.com CONTENTS Specifications ................................................................................................................................................ 1 Features ........................................................................................................................................................ 1 Pin Configurations......................................................................................................................................... 1 Ordering Information ..................................................................................................................................... 2 Part Number.................................................................................................................................................. 2 Electrical Specifications ................................................................................................................................ 4 Block Diagram............................................................................................................................................... 9 Pin Function ................................................................................................................................................ 10 Command Operation................................................................................................................................... 11 Simplified State Diagram ............................................................................................................................ 19 Mode Register Configuration ...................................................................................................................... 20 Power-up sequence .................................................................................................................................... 22 Operation of the SDRAM ............................................................................................................................ 23 Timing Waveforms ...................................................................................................................................... 39 Package Drawing....................


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