PNP S I L I C O N T R AN S I S T O R
www.DataSheet4U.com
Shantou Huashan Electronic Devices Co.,Ltd.
HC8550S
█ APPLI...
PNP S I L I C O N T R AN S I S T O R
www.DataSheet4U.com
Shantou Huashan Electronic Devices Co.,Ltd.
HC8550S
█ APPLICATIONS
Audio Frequency Amplifier.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
T stg —— Storage Temperature ………………………… -55~150 ℃ Tj——Juncttion Temperature …………………………………150℃ P C —— Collector Dissipation ………………………………… 625W VCBO——Collector-Base Voltage………………………………-40V VCEO——Collector-Emitter Voltage……………………………-20V V EBO —— Emitter-Base Voltage ……………………………… -5V IC——Collector Current………………………………………-500mA 1―Emitter,E 2―Collector, C 3―Base,B TO-92
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol Characteristics Collector Cut-off Current Emitter Cut-off Current Min Typ Max Unit Test Conditions
ICBO IEBO HFE(2)
-0.1 -0.1 85 40 -0.6 -0.6 -40 -20 -5 -1.2 -0.73 500
μA μA
VCB=-25V, IE=0 VEB=-3V, IC=0 VCE=-1V, IC=-50mA VCE=-1V, IC=-500mA
HFE(1) DC Current Gain VCE(sat) Collector- Emitter Saturation Voltage VBE(sat) VBE(on) BVCBO BVCEO BVEBO
Base- Emitter Saturation Voltage
V V V V V V
IC=-500mA, IB=-50mA IC=-500mA,IB=-50mA VCE=-1V, IC=-10mA IC=-100μA,IE=0 IC=-2mA,IB=0 IE=100μA,IC=0
Base-Emitter On Voltage
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage
█ hFE Classification
B 85—160 C 120—200 D 160—300 E 270—500
PNP S I L I C O N T R AN S I S T O R
www.DataSheet4U.com
Shantou Huashan Electronic Devices Co.,Ltd.
HC8550S
...