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K12A60U Dataheets PDF



Part Number K12A60U
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description TK12A60U
Datasheet K12A60U DatasheetK12A60U Datasheet (PDF)

www.DataSheet4U.com TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ) TK12A60U Switching Regulator Applications • • • • Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-sour.

  K12A60U   K12A60U


HL4929 K12A60U KGA4133


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