MMBT8050
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications. As complementary type the PNP...
MMBT8050
NPN Silicon Epitaxial Planar
Transistor
for switching and amplifier applications. As complementary type the
PNP transistor MMBT8550 is recommended.
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SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC Ptot Tj TS
Value 40 25 6 600 350 150 - 55 to + 150
Unit V V V mA mW
O
C C
O
Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 100 mA
at VCE = 1 V, IC = 500 mA Collector Base Cutoff Current at VCB = 35 V Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 2 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Gain Bandwidth Product at VCE = 5 V, IC = 10 mA
Symbol MMBT8050C MMBT8050D hFE hFE hFE ICBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) fT
Min. 100 160 40 40 25 6 -
Typ. 100
Max. 250 400 100 0.5 1.2 -
Unit nA V V V V V MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 11/04/2008
MMBT8050
www.DataSheet4U.com
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock C...
