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BLS6G2731S-130
LDMOS S-band radar power transistor
Rev. 01 — 26 July 2010 Objective data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.
Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 2.7 to 3.1 VDS (V) 32 PL (W) 130 Gp (dB) 12.5 ηD (%) 47 tr (ns) 20 tf (ns) 6
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features and benefits
Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %: Output power = 130 W Power gain = 12.5 dB Efficiency = 47 % Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2.7 GHz to 3.1 GHz) Internally matched for ease of use Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency range
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BLS6G2731S-130
LDMOS S-band radar power transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
1 3 2
Graphic symbol
1
2 3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3. Ordering information Package Name BLS6G2731S-130 Description ceramic earless flanged cavity package; 2 leads Version SOT922-1 Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Min −0.5 −65 Max 60 +13 33 +150 200 Unit V V A °C °C
5. Thermal characteristics
Table 5. Zth(j-mb) Thermal characteristics Conditions Tcase = 85 °C; PL = 130 W tp = 100 μs; δ = 10 % tp = 200 μs; δ = 10 % tp = 300 μs; δ = 10 % tp = 100 μs; δ = 20 % 0.23 0.28 0.32 0.33 K/W K/W K/W K/W Typ Unit transient thermal impedance from junction to mounting base Symbol Parameter
BLS6G2731S-130
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© NXP B.V. 2010. All rights reserved.
Objective data sheet
Rev. 01 — 26 July 2010
2 of 9
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NXP Semiconductors
BLS6G2731S-130
LDMOS S-band radar power transistor
6. Characteristics
Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter VGS(th) IDSS IDSX IGSS gfs RDS(on) gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance Conditions VDS = 10 V; ID = 180 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 1.