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BLS6G2731S-130 Dataheets PDF



Part Number BLS6G2731S-130
Manufacturers NXP
Logo NXP
Description LDMOS S-band radar power transistor
Datasheet BLS6G2731S-130 DatasheetBLS6G2731S-130 Datasheet (PDF)

www.DataSheet4U.com BLS6G2731S-130 LDMOS S-band radar power transistor Rev. 01 — 26 July 2010 Objective data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 2.7 to 3.1 VDS (V) 32 PL (W) 130 Gp (dB) 12.5 ηD (%) 47 tr (ns) .

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www.DataSheet4U.com BLS6G2731S-130 LDMOS S-band radar power transistor Rev. 01 — 26 July 2010 Objective data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 2.7 to 3.1 VDS (V) 32 PL (W) 130 Gp (dB) 12.5 ηD (%) 47 tr (ns) 20 tf (ns) 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits „ Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %: ‹ Output power = 130 W ‹ Power gain = 12.5 dB ‹ Efficiency = 47 % „ Easy power control „ Integrated ESD protection „ High flexibility with respect to pulse formats „ Excellent ruggedness „ High efficiency „ Excellent thermal stability „ Designed for broadband operation (2.7 GHz to 3.1 GHz) „ Internally matched for ease of use „ Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3 Applications „ S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency range www.DataSheet4U.com NXP Semiconductors BLS6G2731S-130 LDMOS S-band radar power transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline 1 3 2 Graphic symbol 1 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLS6G2731S-130 Description ceramic earless flanged cavity package; 2 leads Version SOT922-1 Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Min −0.5 −65 Max 60 +13 33 +150 200 Unit V V A °C °C 5. Thermal characteristics Table 5. Zth(j-mb) Thermal characteristics Conditions Tcase = 85 °C; PL = 130 W tp = 100 μs; δ = 10 % tp = 200 μs; δ = 10 % tp = 300 μs; δ = 10 % tp = 100 μs; δ = 20 % 0.23 0.28 0.32 0.33 K/W K/W K/W K/W Typ Unit transient thermal impedance from junction to mounting base Symbol Parameter BLS6G2731S-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Objective data sheet Rev. 01 — 26 July 2010 2 of 9 www.DataSheet4U.com NXP Semiconductors BLS6G2731S-130 LDMOS S-band radar power transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter VGS(th) IDSS IDSX IGSS gfs RDS(on) gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance Conditions VDS = 10 V; ID = 180 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 1.


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