BUK652R7-30C

www.DataSheet4U.com BUK652R7-30C N-channel TrenchMOS intermediate level FET Rev. 01 — 5 July 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V Automotive systems „ Electric and electro-hydraulic power steering „ Motors, lamps and solenoid control „ Start-Stop micro-hybrid applications „ Transmission control „ Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13; see Figure 14 [1] Min - Typ - Max Unit 30 100 204 V A W mΩ Static characteristics 2.72 3.2 www.DataSheet4U.com NXP Semiconductors BUK652R7-30C N-channel TrenchMOS intermediate level FET Quick reference data …continued Parameter non-repetitive drain-source avalanche energy gate-drain charge Conditions ID = 100 A; V...