Small Signal MOSFET
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LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
Silicon N-Channel
zFeatures
1) Low on-resistance. 2...
Description
www.DataSheet4U.com
LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
Silicon N-Channel
zFeatures
1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive. 4) Easily designed drive circuits. 5) Easy to parallel. 6) Pb-Free package is available. 7) ESD Protected:2000V
SRK7002LT1G
3
1 2
SOT-23 (TO-236AB)
3
d
zDevice Marking and Ordering Information
Device SRK7002LT1G SRK7002LT3G Marking RK RK Shipping 3000 Tape & Reel 10000 Tape & Reel
1
g
s
2
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Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Continuous Drain reverse current Pulsed Symbol VDSS VGSS ID IDP∗1 IDR IDRP∗1 PD∗2 Tch Tstg Limits 60 ±20 115 0.8 115 0.8 225 150 −55~+150 Unit V V mA A mA A mW °C °C
Total power dissipation Channel temperature Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a 1×0.75×0.062 inch glass epoxy board.
1/4
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LESHAN RADIO COMPANY, LTD.
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Parameter
Gate-source leakage current Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Symbol IGSS V (BR) DSS IDSS VGS (th) Min. − 60 − 1 − − 80 − − − − − Typ. − − − 1.85 − − − 25 10 3.0 12 20 Max. ±10 − 1 2.5 7.5 7.5 − 50 25 5.0 20 30 Unit µA V µA V Ω mS pF pF pF ns ns
SRK7002LT1G
Test Conditions
VGS=±20V, VDS=0V ID=10µA, VGS=0V VDS=60V, VGS=0V VDS=VGS , ID=250uA ID=0.5A, VGS=10V ID=0.05A, VGS=5V VDS=10V, ID=0.2A VDS=25V VGS=0V f=1MHz ID=200mA, VDD 30V VGS=10V, ...
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