MMBV3401LT1G

www.DataSheet4U.com MMBV3401LT1G Silicon Pin Diode This device is designed primarily for VHF band switching applications but is also suitable for use in general−purpose switching circuits. Supplied in a Surface Mount package. Features Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability http://onsemi.com Low Capacitance − 0.7 pF (Typ) at VR = 20 Vdc Very Low Series Resistance at 100 MHz These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 0.34 W (Typ) @ IF = 10 mAdc 3 Cathode 1 Anode 3 1 MAXIMUM RATINGS Rating Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR PD Value 35 200 2.0 +125 −55 to +150 Unit Vdc mW mW/°C °C °C 2 SOT−23 (TO−236AB) CASE 318−08 STYLE 8 MARKING DIAGRAM 4D M G G 1 4D = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. TJ Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION Device MMBV3401L T1G MMBV3401L T3G Package SOT−23 (Pb−Free) Shipping† 3000 Tape & Reel SOT−23 10,000 Tape & Reel (Pb−Free) †For information on tape and reel specif...