MMBT4124LT1G

www.DataSheet4U.com MMBT4124LT1G General Purpose Transistor NPN Silicon Features These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value 25 30 5.0 200 Unit Vdc Vdc Vdc mAdc 3 Symbol PD Max 225 1.8 556 300 2.4 417 −55 to +150 Unit W mW/°C °C/W W mW/°C °C/W °C 1 2 SOT−23 (TO−236) CASE 318 STYLE 6 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature RqJA PD RqJA TJ, Tstg MARKING DIAGRAM ZC M G G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. ZC = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBT4124L T1G Package SOT−23 (Pb−Free) Shippin...