0405SC-2200M Rev A1
0405SC-2200M
2200Watts, 125 Volts, Class AB 406 to 450 MHz
Silicon Carbide SIT
PRELIMINARY SPECIFIC...
0405SC-2200M Rev A1
0405SC-2200M
2200Watts, 125 Volts, Class AB 406 to 450 MHz
Silicon Carbide SIT
PRELIMINARY SPECIFICATION
GENERAL DESCRIPTION
The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION
TRANSISTOR (SIT) capable of providing 2200 Watts of RF Peak power from 406 to 450 MHz. The
transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar and Long Range Tracking Radar. The device is an addition to the series of High Power Silicon Carbide
Transistors from Microsemi RF IS.
CASE OUTLINE 55TW-FET
(Common Gate)
ABSOLUTE MAXIMUM RATINGS
Voltage and Current Drain-Source (VDSS) Gate-Source (VGS)
Temperatures Storage Temperature Operating Junction Temperature
250V -1V
-65 to +150°C +250°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
MIN TYP MAX UNITS
Idss
Drain-Source Leakage Current VGS = -20V, VDG= 125V
Igss
Gate-Source Leakage Current VGS = -20V, VDS = 0V
θJC1
Thermal Resistance
750 µA
50
µA
0.15 ºC/W
FUNCTIONAL CHARACTERISTICS @ 25°C, Vdd = 125V, Idq(ave) = 120 mA, Freq = 406, 425, 450 MHz,
GPG
Common Gate Power Gain
Pout = 2200 W, Pulsed
7.0 7.5
dB
Pin
Input Power
Pulse Width = 300us, DF = 6%
390 440 W
ηd
Drain Efficiency
F = 450 MHz, Pout =2200W
50 55
%
ψ
Load Mismatch
F = 420 MHz, Pout = 2200W
10:1
Po +1dB Power Output – Higher Drive F = 450 MHz, Pin = 490 W
2450
W
Vgs
Gate source Voltage
Set for Idq...