Freescale Semiconductor Technical Data
Document Number: MRF8S26120H www.DataSheet4U.com Rev. 0, 6/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies from 2620 to 2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modula...
