FIO50-12BD

www.DataSheet4U.com FIO 50-12BD Bidirectional Switch with NPT3 IGBT and fast Diode Bridge in ISOPLUS i4-PACTM 3 IC25 = 50 A = 1200 V VCES VCE(sat) typ. = 2.0 V 1 2 1 4 5 5 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15 V; RG = 39 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 900V; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 50 32 50 VCES 10 200 V V A A A µs W Features NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits HiPerFREDTM diodes - fast reverse recovery - low operating forward voltage - low leakage current ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline - UL registered, E 72873 Applications switches to control bidirectional current flow by a single control signal: matrix converters spare matrix converters AC controllers Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.0 2.3 4.5 0.4 200 85 50 440 50 4.6 2.2 2 150 1.2 2.6 6.5 0.4 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.6 K/W K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthJS...