BC487, BC487B
High Current Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating...
BC487, BC487B
High Current
Transistors
NPN Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO VCBO VEBO
IC PD
60
Vdc
60
Vdc
5.0
Vdc
0.5
Adc
625
mW
5.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
W
12
mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg − 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
http://onsemi.com
COLLECTOR 1
2 BASE
3 EMITTER
MARKING DIAGRAM
123 STRAIGHT LEAD
BULK PACK
TO−92 CASE 29 STYLE 17
1 2 3
BENT LEAD TAPE & REEL AMMO PACK
BC48 7x
AYWW G G
BC487
A Y WW G
= Device Code x = nothing or B = Assembly Location = Year = Work Week = Pb−Free Package
(Note: Microdot may be in either location)
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D....