RB530S-30

www.DataSheet4U.com Schottky barrier Diode RB530S-30 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 0.8 Features 1)Ultra small mold type. (EMD2) 2)Low IR 3)High reliability 0.6 EMD2 Construction Silicon epitaxial planer Structure Taping specifications (Unit : mm) Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (DC) VR Average rectified forward current Io Forward current surge peak (60Hz/1cyc) IFSM Junction temperature Tj Storage temperature Tstg Electical characteristics (Ta=25C) Parameter Forward voltage Reverse current Limits 30 100 500 125 -40 to +125 Unit V mA mA C C Symbol VF IR Min. - Typ. - Max. 0.45 0.5 Unit V μA Conditions IF=10mA VR=10V www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.02 - Rev.A 1.7 RB530S-30 Electical characteristics curves 1000 1000000 　 100 www.DataSheet4U.com Data Sheet FORWARD CURRENT : I F(mA) REVERSE CURRENT : IR(nA) 10 1 0.1 0.01 0.001 0 Ta=75 C Ta=-25 C Ta=25 C 10000 1000 100 10 1 0.1 Ta=75 C Ta=25 C CAPACITANCE BETWEEN TERMINALS : Ct(pF) 100 Ta=125 C Ta=125 f=1MHｚ 100000 10 Ta=-25 C 100 200 300 400 500 600 0 10 20 30 1 0 5 10 15 20 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 370 FORWARD VOLTAGE : V F(mV) REVERSE CURRENT : IR(nA) 360 CAPACITANCE BETWEEN TERMINALS : Ct(pF) Ta=25 C VF=10mA n=30pcs 1...