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Schottky barrier Diode
RB162VA-20
Applications General rectification Dimensions (Unit : mm)
0.17 ...
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Schottky barrier Diode
RB162VA-20
Applications General rectification Dimensions (Unit : mm)
0.17 −0.05
+0.1
Land size figure (Unit : mm) 1.1
3)High reliability
TUMD2
Structure Silicon epitaxial planer
Structure
0.6
+0.2 −0.1
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive) VRM Reverse voltage (DC) VR Average rectified forward current Io Forward current surge peak (60Hz/1cyc) IFSM Junction temperature Tj Storage temperature Tstg
Limits 25 20 1.0 5.0 125 -40 to +125
Unit V V A A C C
Electrical characteristics (Ta=25C) Parameter Symbol Forward voltage Reverse current VF IR
Min. -
Typ. 0.36 0.3
Max. 0.4 1.2
Unit V mA
0.8 0.5 Conditions IF=1.0A VR=20V
Feature 1)Small mold type (TUMD2) 2)Low VF
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2.0
1/3
2010.02 - Rev.A
RB162VA-20
Electrical characteristics curves
10 FORWARD CURRENT : IF(A) Ta=125 C 1 Ta=75 C 0.1 REVERSE CURRENT : IR(A) 10000 100000
1000 Ta=125 C CAPACITANCE BETWEEN TERMINALS : Ct(pF)
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Data Sheet
f=1MHz
100
1000
Ta=75 C
100
Ta=25 C
0.01
Ta=25 C Ta=-25 C
10
10 Ta=-25 C 1
0.001 0.0
1 0 5 10 15 20 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS
0.1
0.2
0.3
0.4
0.5
0
10 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS
20
FORWARD VOLTAGE : V F(V) VF-IF CHARACTERISTICS
400 Ta=25 C VF=1.0A n=30pcs
450 CAPACITANCE BETWEEN TERMINALS : Ct(pF) Ta=25 C VR...