RB162VA-20

www.DataSheet4U.com Schottky barrier Diode RB162VA-20 Applications General rectification Dimensions (Unit : mm) 0.17 −0.05 +0.1 Land size figure (Unit : mm) 1.1 3)High reliability TUMD2 Structure Silicon epitaxial planer Structure 0.6 +0.2 −0.1 Taping specifications (Unit : mm) Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive) VRM Reverse voltage (DC) VR Average rectified forward current Io Forward current surge peak (60Hz/1cyc) IFSM Junction temperature Tj Storage temperature Tstg Limits 25 20 1.0 5.0 125 -40 to +125 Unit V V A A C C Electrical characteristics (Ta=25C) Parameter Symbol Forward voltage Reverse current VF IR Min. - Typ. 0.36 0.3 Max. 0.4 1.2 Unit V mA 0.8 0.5 Conditions IF=1.0A VR=20V Feature 1)Small mold type (TUMD2) 2)Low VF www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2.0 1/3 2010.02 - Rev.A RB162VA-20 Electrical characteristics curves 10 FORWARD CURRENT : IF(A) Ta=125 C 1 Ta=75 C 0.1 REVERSE CURRENT : IR(A) 10000 100000 　 1000 Ta=125 C CAPACITANCE BETWEEN TERMINALS : Ct(pF) www.DataSheet4U.com Data Sheet f=1MHz 100 1000 Ta=75 C 100 Ta=25 C 0.01 Ta=25 C Ta=-25 C 10 10 Ta=-25 C 1 0.001 0.0 1 0 5 10 15 20 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 0.1 0.2 0.3 0.4 0.5 0 10 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 20 FORWARD VOLTAGE : V F(V) VF-IF CHARACTERISTICS 400 Ta=25 C VF=1.0A n=30pcs 450 CAPACITANCE BETWEEN TERMINALS : Ct(pF) Ta=25 C VR...