DatasheetsPDF.com

RB051M-2Y Dataheets PDF



Part Number RB051M-2Y
Manufacturers Rohm
Logo Rohm
Description Schottky Barrier Diode
Datasheet RB051M-2Y DatasheetRB051M-2Y Datasheet (PDF)

www.DataSheet4U.com Schottky Barrier Diode RB051M-2Y Applications General rectification Dimensions(Unit : mm)  Land size figure(Unit : mm) 1.2 0.85 Features 1)Small power mold type. (PMDU) 2)Ultra Low VF 3)High reliability PMDU Construction Silicon epitaxial planer Structure Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05 3.5±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1 1.5MAX Symbol Reverse voltage (repetitive) VRM Reverse voltage (DC) VR .

  RB051M-2Y   RB051M-2Y


Document
www.DataSheet4U.com Schottky Barrier Diode RB051M-2Y Applications General rectification Dimensions(Unit : mm)  Land size figure(Unit : mm) 1.2 0.85 Features 1)Small power mold type. (PMDU) 2)Ultra Low VF 3)High reliability PMDU Construction Silicon epitaxial planer Structure Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05 3.5±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1 1.5MAX Symbol Reverse voltage (repetitive) VRM Reverse voltage (DC) VR Average rectified forward current(*1) Io Forward current surge peak (60Hz・1cyc) IFSM Junction temperature Tj Storage temperature Tstg (*1)Mounting on alumina board. Tc=95 C Max. Absolute maximum ratings (Ta=25C) Parameter Limits 20 20 3 30 125 -40 to +125 Unit V V A A C C Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Symbol VF IR Min. - Typ. - Max. 0.46 0.9 Unit V mA Conditions IF=3A VR=20V www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.01 - Rev.A 3.05 RB051M-2Y   www.DataSheet4U.com Data Sheet Electrical characteristic curves 10 Ta=125 C REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=150 C Ta=75 C Ta=25 C 0.1 Ta=-25 C 10000000 1000000 Ta=150 C Ta=125 C 1000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 100000 10000 1000 100 10 1 Ta=75 C 100 Ta=25 C 10 0.01 Ta=-25 C 0.001 0 100 200 300 400 500 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 0.1 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 20 1 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 410 5000 Ta=25 C IF=3A n=30pcs 4500 REVERSE CURRENT:IR(uA) 4000 3500 3000 2500 2000 1500 1000 500 AVE:270.0uA Ta=25 C VR=30V n=30pcs 500 490 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 480 470 460 450 440 430 420 410 400 AVE:454.2pF Ta=25 C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) 400 390 380 370 AVE:382.2mV 360 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 200 RESERVE RECOVERY TIME:trr(ns) 30 25 20 15 10 5 0 IFSM DISPERSION MAP trr DISPERSION MAP Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 100 90 PEAK SURGE FORWARD CURRENT:IFSM(A) 80 70 60 50 40 30 20 10 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 Ifsm 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 150 Ifsm 8.3ms 1cyc 1cyc 100 AVE:48.0A 50 AVE:9.8ns 0 Mounted on alumina board 100 90 PEAK SURGE FORWARD CURRENT:IFSM(A) 80 70 60 50 40 30 20 10 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Ifsm t 100 TRANSIENT  C/W) THAERMAL IMPEDANCE:Rth ( IM=10mA IF=0.5A Rth(j-a) 1ms 2 D=1/2 time FORWARD POWER DISSIPATION:Pf(W) 1.5 Sin(=180) 300us 10 Rth(j-c) 1 DC 1 0.5 0.1 0.001 0 0.01 1 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 100 1000 0 2 3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 1 4 5 www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/3 2010.01 - Rev.A RB051M-2Y   www.DataSheet4U.com Data Sheet Io 0A 0V t 100 90 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 5 DC T Io VR D=t/T VR=1V Tj=150 C 5 0A 0V t T VR D=t/T VR=1V Tj=150 C AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 80 REVERSE POWER DISSIPATION:PR (W) 70 60 50 40 30 20 10 0 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 20 Sin(=180) DC D=1/2 4 D=1/2 3 4 DC D=1/2 3 Sin(=180) 2 2 Sin(=180) 1 1 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta( C) Derating Curve"(Io-Ta) 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc) 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 AVE:9.80kV 10 5 0 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/3 2010.01 - Rev.A Notice www.DataSheet4U.com Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of su.


QS8J4 RB051M-2Y RB056L-40


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)