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Schottky Barrier Diode
RB051M-2Y
Applications General rectification Dimensions(Unit : mm) Land size figure(Unit : mm)
1.2 0.85
Features 1)Small power mold type. (PMDU) 2)Ultra Low VF 3)High reliability
PMDU
Construction Silicon epitaxial planer
Structure
Taping specifications(Unit : mm)
4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05
3.5±0.05
8.0±0.2
1.81±0.1
4.0±0.1
φ1.0±0.1
3.71±0.1
1.5MAX
Symbol Reverse voltage (repetitive) VRM Reverse voltage (DC) VR Average rectified forward current(*1) Io Forward current surge peak (60Hz・1cyc) IFSM Junction temperature Tj Storage temperature Tstg (*1)Mounting on alumina board. Tc=95 C Max.
Absolute maximum ratings (Ta=25C) Parameter
Limits 20 20 3 30 125 -40 to +125
Unit V V A A
C C
Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current
Symbol VF IR
Min. -
Typ. -
Max. 0.46 0.9
Unit V mA
Conditions IF=3A VR=20V
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RB051M-2Y
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Data Sheet
Electrical characteristic curves
10 Ta=125 C REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=150 C Ta=75 C Ta=25 C 0.1 Ta=-25 C
10000000 1000000
Ta=150 C
Ta=125 C
1000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1
100000 10000 1000 100 10 1
Ta=75 C
100
Ta=25 C
10
0.01
Ta=-25 C
0.001 0 100 200 300 400 500 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
0.1 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 20
1 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
410
5000 Ta=25 C IF=3A n=30pcs 4500 REVERSE CURRENT:IR(uA) 4000 3500 3000 2500 2000 1500 1000 500 AVE:270.0uA Ta=25 C VR=30V n=30pcs
500 490 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 480 470 460 450 440 430 420 410 400 AVE:454.2pF Ta=25 C f=1MHz VR=0V n=10pcs
FORWARD VOLTAGE:VF(mV)
400
390
380
370
AVE:382.2mV
360
0
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
200 RESERVE RECOVERY TIME:trr(ns)
30 25 20 15 10 5 0 IFSM DISPERSION MAP trr DISPERSION MAP Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs
100 90 PEAK SURGE FORWARD CURRENT:IFSM(A) 80 70 60 50 40 30 20 10 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 Ifsm 8.3ms 8.3ms
PEAK SURGE FORWARD CURRENT:IFSM(A)
150
Ifsm 8.3ms
1cyc
1cyc
100 AVE:48.0A 50
AVE:9.8ns
0
Mounted on alumina board 100 90 PEAK SURGE FORWARD CURRENT:IFSM(A) 80 70 60 50 40 30 20 10 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Ifsm t 100 TRANSIENT C/W) THAERMAL IMPEDANCE:Rth ( IM=10mA IF=0.5A Rth(j-a)
1ms
2
D=1/2
time FORWARD POWER DISSIPATION:Pf(W) 1.5 Sin(=180)
300us 10 Rth(j-c)
1
DC
1
0.5
0.1 0.001
0 0.01 1 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 100 1000 0 2 3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 1 4 5
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2010.01 - Rev.A
RB051M-2Y
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Data Sheet
Io
0A 0V t 100 90 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 5 DC T
Io VR D=t/T VR=1V Tj=150 C 5
0A 0V t T
VR D=t/T VR=1V Tj=150 C
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
80 REVERSE POWER DISSIPATION:PR (W) 70 60 50 40 30 20 10 0 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 20 Sin(=180) DC D=1/2
4 D=1/2 3
4
DC D=1/2
3 Sin(=180) 2
2
Sin(=180)
1
1
0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta( C) Derating Curve"(Io-Ta)
0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc)
30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 AVE:9.80kV 10 5 0 C=200pF R=0 C=100pF R=1.5k
ESD DISPERSION MAP
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2010.01 - Rev.A
Notice
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Notes
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