FM25H20

Pre-Production www.DataSheet4U.com FM25H20 2Mb Serial 3V F-RAM Memory Features 2M bit Ferroelectric Nonvolatile RAM Organized as 256K x 8 bits High Endurance 100 Trillion (1014) Read/Writes 10 Year Data Retention NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI Up to 40 MHz Frequency Direct Hardware Replacement for Serial Flash SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Write Protection Scheme Hardware Protection Software Protection Low Power Consumption Low Voltage Operation 2.7V – 3.6V Sleep Mode Current 3 µA (typ.) Industry Standard Configurations Industrial Temperature -40°C to +85°C 8-pin “Green”/RoHS TDFN Package 8- pin “Green”/RoHS EIAJ SOIC Package Description The FM25H20 is a 2-megabit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by Serial Flash and other nonvolatile memories. Unlike Serial Flash, the FM25H20 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after it has been transferred to the device. The next bus cycle may commence without the need for data polling. The product offers virtually unlimited write endurance, orders of magnitude more endurance ...