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C2898

Hitachi Semiconductor

2sC2898

2SC2898 Silicon NPN Triple Diffused www.DataSheet4U.com Application High voltage, high speed and high power switching ...



C2898

Hitachi Semiconductor


Octopart Stock #: O-679617

Findchips Stock #: 679617-F

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Description
2SC2898 Silicon NPN Triple Diffused www.DataSheet4U.com Application High voltage, high speed and high power switching Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) IB PC * Tj Tstg 1 Ratings 500 400 7 8 16 4 50 150 –55 to +150 Unit V V V A A A W °C °C 2SC2898 www.DataSheet4U.com Electrical Characteristics (Ta = 25°C) Item Collector to emitter sustain voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current Symbol VCEO(sus) VCEX(sus) Min 400 400 Typ — — Max — — Unit V V Test conditions I C = 0.2 A, RBE = ∞, L = 100 mH I C = 8 A, IB1 = 1.6 A, I B2 = –0.8 A, VBE = –5 V, L = 180 µH, Clamped I E = 10 mA, IC = 0 VCB = 400 V, IE = 0 VCE = 350 V, RBE = ∞ VCE = 5 V, IC = 4 A*1 VCE = 5 V, IC = 8 A*1 V V µs µs µs I C = 8 A, IB1 = –IB2 = 1.6 A, VCC ≅ 150 V I C = 4 A, IB = 0.8 A*1 V(BR)EBO I CBO I CEO 7 — — 15 7 — — — — — — — — — — — — — — — — 50 50 — — 1.0 1.5 0.8 2.0 0.8 V µA µA DC current transfer ratio hFE1 hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test VCE(sat) VBE(sat) t on t stg tf Maximum Collector Dissipati...




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