SSM3J114TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J114TU
○ High-Speed Switching Applications ...
SSM3J114TU
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type
SSM3J114TU
○ High-Speed Switching Applications ○ Power Management Switch Applications
Unit: mm
0.3-+00..015
1.5 V drive Low on-resistance
Ron = 526 mΩ (max) (@ VGS = -1.5 V) Ron = 321 mΩ (max) (@ VGS = -1.8 V) Ron = 199 mΩ (max) (@ VGS = -2.5 V) Ron = 149 mΩ (max) (@ VGS = -4.0 V)
2.0±0.1 0.65±0.05
2.1±0.1 1.7±0.1
1
2
3
0.166±0.05
Absolute Maximum Ratings (Ta = 25°C)
0.7±0.05
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
-20
V
Gate-Source voltage
VGSS
±8
V
Drain current
DC
ID
Pulse
IDP
-1.8 A
-3.6
1. Gate 2. Source 3. Drain
Drain power dissipation
Channel temperature Storage temperature
PD (Note 1)
800
mW
PD (Note 2)
500
UFM
Tch
150
°C
JEDEC
―
Tstg
−55 to 150
°C
JEITA
―
Note:
Using continuously under heavy loads (e.g. the application of
TOSHIBA
2-2U1A
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
Weight: 6.6 mg (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on ceramic board (2...