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RB205T-90
Diodes
Schottky barrier diode
RB205T-90
zApplications Switching power supply zExternal d...
www.DataSheet4U.com
RB205T-90
Diodes
Schottky barrier diode
RB205T-90
zApplications Switching power supply zExternal dimensions (Unit : mm)
4.5±0.3 0.1
zStructure
8.0±0.2 12.0±0.2
zFeatures 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability
1.2
10.0±0.3 0.1
2.8±0.2 0.1
15.0±0.4 0.2 13.5MIN
①
zConstruction Silicon epitaxial planar
1.3 0.8 (1) (2) (3)
5.0±0.2
0.7±0.1 0.05
8.0
2.6±0.5
ROHM : TO220FN ① Manufacture Date
zAbsolute maximum ratings (Ta=25°C)
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(*1) Forward current surge peak (60Hz・1cyc)(*1) Junction temperature Storage temperature (*1)Tc=100℃max. Per chip : Io/2 Symbol VRM VR Io IFSM Tj Tstg Limits 90 90 15 100 150 -40 to +150 Unit V V A A ℃ ℃
zElectrical characteristic (Ta=25°C)
Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR θjc Min. Typ. Max. 0.78 300 2.0 Unit V µA ℃/W Conditions IF=7.5A VR=90V junction to case
Rev.C
1/3
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RB205T-90
Diodes
zElectrical characteristic curves
10 Ta=150℃ 100000 Ta=150℃ Ta=125℃ 1000 f=1MHz
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(A)
1
Ta=75℃ Ta=25℃ Ta=-25℃
1000 100 10 1 0.1 0.01 Ta=-25℃ Ta=25℃
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=125℃
10000 Ta=75℃ 100
0.1
10
0.01 0 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
1 0 10 20 30 40 50 60 70 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 80 90 0 10 20 REVERSE VO...