TK50P04M1

MOSFETs Silicon N-Channel MOS (U-MOS-H) TK50P04M1 1. Applications Switching Voltage Regulators Motor Drivers Power Management Switches 2. Features (1) High-speed switching (2) Low gate charge: QSW = 9.4 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 6.7 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK50P04M1 DPAK 1: Gate 2: Drain (heatsink) 3: Source ©2016 Toshiba Corporation 1 Start of commercial production 2009-02 2016-02-17 Rev.5.0 TK50P04M1 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 40 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 50 A Drain current (pulsed) (Note 1) IDP 150 Power dissipation (Tc = 25) PD 60 W Single-pulse avalanche energy (Note 2) EAS 65 mJ Single-pulse avalanche current IAS 50 A Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba S...