SSM6P16FU

SSM6P16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI) SSM6P16FU High Speed Switching Applications Analog Switch Applications Small package Low on-resistance : RDS(ON) = 8 Ω (max) (@VGS = −4 V) : RDS(ON) = 12 Ω (max) (@VGS = −2.5 V) : RDS(ON) = 45 Ω (max) (@VGS = −1.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS −20 V Gate-Source voltage VGSS ±10 V Drain current Power dissipation DC Pulse ID −100 mA IDP −200 PD(Note1) 200 mW 1: Source1 2: Gate1 3: Drain2 4: Source2 Channel temperature Storage temperature range Tch 150 °C Tstg −55 to 150 °C 5: Gate2 6: Drain1 JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA ― temperature, etc.) may cause this product to decrease in the TOSHIBA 2-2J1C reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Weight: 6.8 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Total rating Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 DT Q1 Q2 1 2 3 1 2 3 Handling Precaut...