SSM6P16FE

SSM6P16FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI) SSM6P16FE High Speed Switching Applications Analog Switch Applications Small package Low on-resistance : RDS(ON) = 8 Ω (max) (@VGS = −4 V) : RDS(ON) = 12 Ω (max) (@VGS = −2.5 V) : RDS(ON) = 45 Ω (max) (@VGS = −1.5 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Unit: mm Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Power dissipation Channel temperature Storage temperature range VDSS −20 V VGSS ±10 V ID −100 mA IDP −200 PD (Note 1) 150 mW Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6) 1:Source1 4:Source2 2:Gate1 5:Gate2 ES6 3:Drain2 6:Drain1 JEDEC ― JEITA ― TOSHIBA 2-2N1D Weight: 3.0 mg (typ.) 0.3 mm 0.45 mm Marking 6 5 ...