SSM6N7002BFE
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
SSM6N7002BFE
High-Speed Switching Appl...
SSM6N7002BFE
TOSHIBA Field-Effect
Transistor Silicon N Channel MOS Type (U-MOSⅣ)
SSM6N7002BFE
High-Speed Switching Applications
Analog Switch Applications
Unit: mm
1.6±0.05
Small package Low ON-resistance : RDS(ON) = 3.3 Ω (max) (@VGS = 4.5 V)
: RDS(ON) = 2.6 Ω (max) (@VGS = 5 V) : RDS(ON) = 2.1 Ω (max) (@VGS = 10 V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
1.6±0.05 1.0±0.05 0.5 0.5
1.2±0.05
1
6
2
5
3
4
0.2±0.05
0.12±0.05
0.55±0.05
Drain-source voltage
VDSS
60
V
Gate-source voltage
VGSS
±20
V
Drain current
DC Pulse
ID
200
mA
IDP
800
Power dissipation
PD (Note 1)
150
mW
1.SOURCE1 4.SOURCE2
2.GATE1
5.GATE2
Channel temperature Storage temperature range
Tch
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
3.DRAIN2
ES6
JEDEC
6.DRAIN1 ―
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-2N1D
operating temperature/current/voltage, etc.) are within the
Weight: 3.0 mg (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1:Total rating, ...
