SSM6N35FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6N35FE
○ High-Speed Switching Applications ○ An...
SSM6N35FE
TOSHIBA Field-Effect
Transistor Silicon N-Channel MOS Type
SSM6N35FE
○ High-Speed Switching Applications ○ Analog Switch Applications
1.2-V drive N-ch 2-in-1 Low ON-resistance: Ron = 20 Ω (max) (@VGS = 1.2 V)
: Ron = 8 Ω (max) (@VGS = 1.5 V) : Ron = 4 Ω (max) (@VGS = 2.5 V) : Ron = 3 Ω (max) (@VGS = 4.0 V)
1.6±0.05 1.0±0.05 0.5 0.5
1.6±0.05 1.2±0.05
Unit: mm
1
6
2
5
3
4
0.2±0.05
0.12±0.05
0.55±0.05
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain–source voltage Gate–source voltage
Drain current
DC Pulse
VDSS VGSS
ID IDP
20
V
±10
V
180 mA
360
ES6
1.Source1 2.Gate1 3.Drain2
4.Source2 5.Gate2 6.Drain1
JEDEC
-
Drain power dissipation
PD(Note 1)
150
mW
JEITA
-
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-2N1A
Weight: 3.0 mg (typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease
in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Total...