SSM6L10TU
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TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type
SSM6L10TU
High Speed Switc...
SSM6L10TU
www.DataSheet4U.com
TOSHIBA Field Effect
Transistor Silicon P/N Channel MOS Type
SSM6L10TU
High Speed Switching Applications
Optimum for high-density mounting in small packages Low on-resistance Q1: Ron = 395mΩ (max) (@VGS = 1.8 V) Q2: Ron = 980mΩ (max) (@VGS = -1.8 V) Unit: mm
2.1±0.1 1.7±0.1 0.65 0.65
Unit V V A
Q1 Absolute Maximum Ratings (Ta = 25°C)
2.0±0.1 1.3±0.1
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP Rating 20 ± 12 0.5 1.5
1 2 3
6 5 4
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP Rating -20 ±8 -0.5 -1.5 Unit V V A
0.7±0.05
UF6
1.Source1 2.Gate1 3.Drain2
4.Source2 5.Gate2 6.Drain1 ― ― 2-2T1B
Absolute Maximum Ratings(Q1,Q2 Common)(Ta = 25°C)
Characteristics Drain power dissipation Channel temperature Storage temperature range Symbol PD
(Note 1)
JEDEC JEITA TOSHIBA
Rating 500 150 −55~150
Unit mW °C °C
Weight: 7.0 mg (typ.)
Tch Tstg
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling ...